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 SIDE-LOOK PACKAGE PIN PHOTODIODE
Description
The MID-73H1C is a photodiode mounted in special dark plastic package and suitable for the IRED (850nm / 880nm) Type.
3.05 (.120)
MID-73H1C
Package Dimensions
Unit : mm (inches )
7.50.12 (..295 3.00+0.120 (.118.005) SEE NOTE 2 5.20.12 (.205.005) RADIANT SENSITIVE AREA ANODE 16.00 MIN. (.630)
Features
l l l l
0.50 TYP. (.020) 1.00MIN. (.039) 2.54 NOM. (.100) SEE NOTE 3
High photo sensitivity Low junction capacitance High cut-off frequency Fast switching time
A
C
Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC Parameter Power Dissipation Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds
o o
Unit mW
Unity Opto Technology Co., Ltd.
02/04/2002
MID-73H1C
Optical-Electrical Characteristics
o @ TA=25 C
Parameter Reverse Breakdown Voltage Reverse Dark Current Open Circuit Voltage Rise Time Fall Time Light Current Total Capacitance
Test Conditions IR=0.1mA Ee=0 VR=10V Ee=0 =850nm Ee=0.1mW/cm2 VR =10V =850nm RL=50 VR =5V, =850nm Ee=0.1mW/cm2 VR =3V, f=1MHZ Ee=0
Symbol V(BR)R ID VOC Tr Tf IL CT
Min. 30
Typ.
Max.
Unit V
30 350 50 50 9 25
nA mV
nsec
A pF
Typical Optical-Electrical Characteristic Curves
4000 100
Dark Current IR - pA
3000
Capacitance C - pF
80 60 40 20 0
2000
1000
0
Reverse Volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE o 2 TEMP=25 C , Ee=0 mW/cm
200
0
5
10
15
20
0.01
0.1
1
10
100
Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm
1000
2
Total Power Dissipation mW
150
Dark Current IR - nA
100
100
10
50
1
0 0 20 40 60 80 100
0.1 0 20 40 60 80 100
Ambient Temperature -oC FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE
Ambient Temperature - oC FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE VR=10, Ee=0 mw/cm
2
Unity Opto Technology Co., Ltd.
02/04/2002
MID-73H1C
Typical Optical-Electrical Characteristic Curves
100 1000
Relative Spectral Sensitivity
80 60
Ip - A Photocurrnet
100
10
40 20 0 700 800 900 1000 1100 1200
1
0.1 0.01
0. 1
1
10
Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH
Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 850 nm
0 10
20 30
Relative Sensitivity
40 1.0 0.9 0.8 50 60 70 80 90 0.5 0.3 0.1 0.2 0.4 0.6
FIG.7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002


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